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		<citationkey>BelotoRoLeKuFaUe:2003:CoRaSp</citationkey>
		<title>Correlation between Raman spectra measurements and gradient pattern analysis of annealed porous silicon implanted with nitrogen by plasma immersion íon implantation</title>
		<year>2003</year>
		<secondarytype>PRE CI</secondarytype>
		<author>Beloto, Antonio Fernando,</author>
		<author>Rosa, Reinaldo Roberto,</author>
		<author>Leite, Nelia  Ferreira,</author>
		<author>Kuranaga, Carlos,</author>
		<author>Fabbri, Maurício,</author>
		<author>Ueda, Mário,</author>
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		<conferencename>International Conference on Amorphous & Microcrystalline Semiconductors: Science & Technology, 20.</conferencename>
		<conferencelocation>Campos do Jordão</conferencelocation>
		<date>25 - 29 ago. 2003</date>
		<booktitle>Proceedings</booktitle>
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		<language>en</language>
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